SiGe BiCMOS technology for highly integrated wireless transceivers

SiGe BiCMOS technology and circuit advances are reviewed with particular focus on achieving cost effective, highly integrated wireless transceivers including the prospects for integration of the power amplifier. Technology highlights include the realization of >200 GHz SiGe devices integrated with 0.13 /spl mu/m CMOS and the demonstration of 8-16 fF//spl mu/m/sup 2/ MIM capacitors utilizing high-k dielectrics. Circuit highlights include the demonstration of a 3 mW and a sub-1dB NF PCS LNA, an 802.11b transceiver with integrated 20 dBm PA, and the characterization of power cells capable of >62% PAE at 35 dBm of output power for GSM and >30% PAE at 27 dBm of linear output power for CDMA applications.