A comparison of methods for simulating low dose-rate gamma ray testing of MOS devices

A radiation testing procedure is presented and experimentally verified in which a series of high-dose-rate irradiations, with 100 degrees C annealing under bias between irradiations, is used to simulate a continuous low-dose-rate irradiation. This approach can reduce low-dose-rate testing time by as much as a factor of 100 with respect to actual low-dose-rate irradiations. The procedure also provides detailed information on the behavior of CMOS parts at low dose-rates which are of interest to many satellite systems.<
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