The optical properties of very thin-layer CdTe/ZnSe

The optical properties of the very thin layer semiconductor structure CdTe/ZnSe are investigated using temperature dependent photoluminescence and spectrally resolved three-pulse two-colour femtosecond photon echo measurements. The temperature dependence of the photoluminescence, the wavelength dependence of the dephasing of excited carriers, and the homogeneous broadening of the energy levels shown the luminescence of quantum dots in this samples.