Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply]

For the original article see ibid., vol.38, no.3, p.650-60 (1991). Using transistor transconductance as a measure of speed, M.V. Fischetti and S.E. Laux, the authors of the above-titled paper, conclude that GaAs technology does not offer any significant speed advantage over Si. However, the commenter points out that their contention is contradicted by the data in their paper which show that GaAs MESFETs have transconductance about twice that of Si MOSFETs for the short gate lengths considered. The use of transconductance rather than f/sub t/ as a measure for speed is also questioned. The authors defend their results.<
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