A 0.24/spl mu/m 2.0V 1T1MTJ 16kb NV magnetoresistance RAM with self reference sensing

A non-volatile 16kb magneto-RAM with a 0.24/spl mu/m design rule uses a self reference sensing scheme for reliable sensing margin. This sensing method is achieved by storing the voltage of the magneto-tunnel junction (MTJ) and afterwards storing a reference voltage of the same MTJ (self-reference), thus eliminating variation in tunneling oxide thickness. Cell size is 2.06/spl mu/m/sup 2/ and read access is 120ns.