Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling

To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.