Analysis of fluctuations in ultra-small semiconductor devices

A technique for the analysis of fluctuations in ultra small semiconductor devices is presented. This technique is applied to the computation fluctuations of threshold voltages and terminal characteristics of MOSFET devices due to the random doping fluctuations and oxide roughness. It is based on the linearization of transport equations with respect to the fluctuating quantities. This approach completely avoids computations for many device realizations and, therefore, it is computationally much more efficient than Monte-Carlo techniques.