Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures

Operational wavelength range for low insertion loss and high extinction ratio of GaInAs(P)-InP intersectional optical switches consisting of low-dimensional quantum-well structures, such as quantum-box, quantum-wire, and quantum-film structures, is theoretically analyzed. It is found that superior operation characteristics can be attained with the lower-dimensional quantum-well structure. For instance, an operational wavelength range of around 10 nm for an insertion loss less than 1 dB and an extinction ratio higher than 50 dB can be obtained with the device using a quantum-box structure.<
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