Planar hall effects and magnetoresistance in Co/Cu/Ni/sub 80/Fe/sub 20/ multilayers

In this paper, we have investigated the magnetisation reversal process in [Co (10nm)/Cu (t/sub Cu/)/Ni/sub 80/Fe/sub 20/ (10nm)]/sub 2/ multilayers using a combination of planar Hall effects (PHE) and anisotropic magnetoresistance (AMR) measurements. Planar Hall devices were fabricated on Si(100) substrates using conventional shadow mask technique. Firstly, Co/Cu/Ni/sub 80/Fe/sub 20/ multilayers were prepared by DC sputtering at 10mTorr Ar gas pressure onto a six terminal device shadow mask placed on top of a Si(100) substrate.