SONNS memory: improvement over SONOS flash memory

High-quality silicon-nitride (Si/sub 3/N/sub 4/) formed by rapid thermal nitridation is investigated as the tunnel dielectric in a SONOS-type memory device for the first time. Compared to a conventional SiO/sub 2/ tunnel dielectric, thermal Si/sub 3/N/sub 4/ provides 100X better retention after 1e5 P/E cycles and better endurance characteristics with lower programming voltages. Hence, the SONNS is promising for non-volatile memory applications.