Ka-band CW power performance by AlGaN/GaN HEMTs on SiC

In this paper, we report state of the art CW power results of 0.25-/spl mu/m gate length AlGaN/GaN HEMTs at both 30 and 35 GHz. At a drain bias of 30V, the 200/spl mu/m gate width devices showed a record power density of 4.13 W/mm with 23% of power added efficiency (PAE) and 5.5 dB of associated gain at 35 GHz, which represent the best power density and efficiency achieved by a solid-state devices at this frequency.