XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer

The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al/sub 0.3/Ga/sub 0.7/As (x=0.3) and In/sub x/Ga/sub 1-x/As (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.