Strained quantum well heterostructure: modeling and simulation of 980 nm

The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er/sup 3+/ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.