A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs

A semi-empirical model of surface scattering for Monte Carlo simulation of electrons in the silicon inversion layer at 300 K is proposed. The model compares favorably with different sets of experimental electron effective mobility data over a wide range of normal electric fields, channel impurity concentrations, and substrate bias. Comparisons between Monte Carlo and drift-diffusion simulations show that the model is able to correctly predict the device termination currents in the regime where nonequilibrium transport effects are negligible. It is expected therefore that at small device lengths the Monte Carlo predictions are also quantitatively correct.<
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