A 10 Gb/s CDR in SiGe BiCMOS commercial technology with multistandard capability

A 10 Gb/s CDR in SiGe BiCMOS technology featuring multistandard compliance with SDH/SONET and 10 Gb Ethernet specs and generated jitter below 65 mUlpp is presented. The CDR features a 20 mV-sensitivity limiting amplifier, a 2-DFF-based decision circuit to maximize CPM and a dual loop PLL architecture with external reference clock and a novel PD topology. Power consumption is below 780 mW from 2.5 and 3.3 V supplies.