High current gain 4H-SiC npn bipolar junction transistors

The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.