Ultrafast recovery times and increased absorption nonlinearity in InGaAsP MQW saturable absorbers implanted at 200/spl deg/C

Implantation of an InGaAsP MQW structure with 4 MeV N-ions at room temperature and at 200/spl deg/C results in absorption recovery times < 10 ps. High-temperature implantation improves the post-implantation absorption modulation by up to 20%, due to dynamic annealing. This makes implantation at high temperature an interesting technique for the fabrication of ultrafast non-linear optical devices.