Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides

This paper considers the physical mechanisms responsible for the progressive (i.e. smooth or noisy) breakdown manifestation commonly measured on ultra-thin oxides (Tox<25 /spl Aring/). First, it is verified that the theory previously published is relevant by highlighting progressive behavior predicted on thicker oxides (50 /spl Aring/). Second, the power dissipated is shown not to be correlated to the progressive behavior even if it influences the failure and its occurrence. Finally, the progression being gate voltage and temperature driven, it is shown that the defect generation probability drives the breakdown degradation after its creation. This is proven by measuring the influence on the progression of a bulk bias applied during the stress of a pMOS device in the inversion regime.