Novel dielectric breakdown model of Hf-silicate with high temperature annealing

The influence of the unavoidable high temperature annealing in the MIS fabrication process on the reliability characteristics of high-k gate dielectrics are thoroughly investigated. In particular, the Qbd distributions are drastically degraded after high temperature annealing in Hf-silicate dielectrics. We propose a novel dielectric breakdown model of high-k gate dielectrics, which may be responsible for the poor Qbd distributions.