GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method

We report on a SiO/sub 2/-Ga/sub 2/O/sub 3/ gate insulator stack directly grown on n-type GaN by the photoelectrochemical oxidation method. The resultant MOS devices are fabricated using standard photolithography and liftoff techniques. The effect of annealing temperature on the SiO/sub 2/-Ga/sub 2/O/sub 3//n-type GaN MOS devices is investigated. The properties of high breakdown field, low gate leakage current, and low interface state density are investigated for the MOS devices.