Structure control of ferroelectric PbTiO/sub 3/ thin films using SrTiO/sub 3/ buffer layer prepared by metalorganic decomposition

Polycrystalline PbTiO/sub 3/ thin films were successfully formed on SrTiO/sub 3/ buffer layer by metalorganic decomposition (MOD) technique. The PbTiO/sub 3/ films showed the perovskite structure after annealing at 700/spl deg/C for 30 min in N/sub 2/ ambient. A higher dielectric constant of 157 is obtained in the PbTiO/sub 3//SrTiO/sub 3//Si structure. The hysteresis loop in the capacitance-voltage curves of the MFIS configuration indicated a memory window of 1.2 V with a programming voltage swing of /spl plusmn/5 V due to polarization effect. The memory window will satisfy the practical application of the MFIS-FET memories operating at low voltage in future ULSIs.