Fabrication of a CMOS compatible pressure sensor for harsh environments

This paper presents the fabrication and characteristics of CMOS compatible absolute pressure sensors for harsh environments. The sensor consist of 100 circle membranes with total capacity of 14 pF. Surface micromachining techniques were involved in fabrication of the sensor. Due to its good properties PECVD SiC, layers are used as mechanical layers. The stiction problems were avoided due to use of polyimide PI2610 as sacrificial layer. The pressure sensors were fabricated with change of capacitance of 3.4pF in full pressure range.