Back-channel hot-electron effect on the front-channel characteristics in thin-film SOI MOSFETs

The front-channel I-V characteristics in thin-film SOI MOSFETs have been studied before and after back-channel hot-electron stress. As a result of electron trapping in the buried oxide near the drain junction, this stress causes the following changes: (1) a reduction of the channel current for a given gate voltage; (2) the appearance of the kink effect when measured in the reverse mode (with source and drain interchanged); and (3) an increased breakdown voltage when measured in the reverse mode. Both the kink effect and the change in the breakdown behavior can be attributed to the increased barrier height of the drain-body junction resulting from the localized electron trapping in the buried oxide.<
>