A selection system for MNOS capacitor memories

FOUR FUNDAMENTAL PROBLEMS are associated with the use of MNOS capacitors as ultra-high-density storage elements. The solution to two of these problems has been described’ and is summarized here. Fast writing is accomplished by utilizing avalanche breakdown in the deep depletion layer to generate an inversion layer so that the portion of the applied voltage greater than the substrate avalanche breakdown voltage (VB) falls primarily across the memory dielectric, rather than across the deep depletion layer which otherwise represents a high series impedance.