Laser Polysilicon Link Making

Several laser polysilicon link-making structures have been fabricated and tested. Initial resistance of the laser targets were in the range 10
⁸
\Omega
to 5 x 10
⁹
\Omega
depending on the structure. The structures were serpentine raster scanned with Q-switched frequency doubled Nd:YAG (0.53µm) green laser radiation at various power levels. The size of the scan was 12.5 x 12.5 µm
²
. Link resistance after scanning at an appropriate power level was in the range 50
\Omega
to 500
\Omega
depending on link structure. All of the structures were tested for stability under subsequent high temperature thermal anneals. The results show that a) laser linkmaking targets can be compatible with conventional integrated circuit (IC) processing, b) that the link sizes can be scaled at least to 2 µm; and c) that the links can be closed with a single pulse of green laser radiation.