A New Metallization Technology for Advanced Interconnects on Substrates

A new metailization system based on metallo-organic deposition (MOD) has been developed which offers the high resolution of thin-film technology while eliminating the need for expensive thin-film deposition techniques. The process is capable of resolving lines less than 0.0005 in wide in gold conductors in various types of substrates, such as fused silica, alumina, and glass. The resisivity, adhesion, bondability, and solderability of films deposited from metallo-organic solutions have been shown to be comparable to thin-film conductors on most substrates. On fused silica the MOD gold fim showed better adhesion than a sputtered gold conductor. Insertion loss measurements on a 50-
\Omega
microstrip line are equivalent to the losses for a thin-film line of TiW/Au. MOD resistor films have been deposited with sheet resistivities of 50 and 100
\Omega
/square and a temperature coefficient resistance (TCR) of +220 ppm. Multilayer circuits have been built using both polyimide and lead borosilicate glass dielectrics.