Modeling the contribution of diffusion to device-upset cross sections

A novel technique for determining the diffusion-charge collection-efficiency function /spl Omega//sub /spl tau// (x/spl I.oarr/), which incorporates mixed-boundary conditions and carrier recombination, is presented and applied to a realistic three-dimensional memory device to obtain the upset cross section a as a function of linear energy transfer (LET) and orientation of incidence. The model is able to reproduce experimental measurements and can be used to more accurately predict or across regimes where little data exists. This will allow for the determination of more precise errors rates while simultaneously requiring fewer experimental data points.