Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed.