Switching Characteristics of Nonlinear Field-Effect Transistors: Gallium-Arsenide Versus Silicon

A study of the switching properties of GaAs FET's and other nonlinear elements whose high field velocity saturates without negative differential mobility demonstrates that the high-bias swiching times of GaAs are determined by velocity saturation. Silicon switches are also studied, and situations where GaAs and Si switching properties may be similar are discussed.