Preparation and properties of PbTiO/sub 3/ and Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ thin films by sol-gel processing

Crack-free and dense PbTiO/sub 3/ films 1-2 mu m thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800 degrees C. The electrical properties of the films were studied as a function of temperature, frequency, and DC bias. Also, crack-free films of Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ with an average grain size of 0.4 mu m were prepared using a novel two-stage process. Films 4 mu m thick had moderately high relative permittivities, low dissipation factors, and high resistivity.<
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