MOS-device modeling for computer implementation

Generalized MOS-device and circuit modeling problems are discussed. Guidelines for comparing MOS-device models, for selecting phenomena to be modeled, for acquiring model parameters, and for implementing the model are established. A voltage variable capacitance subroutine within a four-terminal
Q_B
field-dependent model is recommended. The importance of accurate data acquisition and model and parameter maintenance is stressed and computer implementation configurations are discussed.