Three-dimensional model of gate current flow in thyristor. II. Numerical examples

For Part I see ibid., vol.37, no.5, p.1383-8 (1990). Some numerical results which show the advantages of the model are discussed. Advantages include a rapid evaluation of gate driving conditions along the arm of the gate contact for various constructional parameters of a thyristor, an example of the determination of the shape of the initially turned-on region located along one arm of the digital gate, and some results concerning the influence of constructional parameters on the width of the initially turned-on area. The influence of the interfacial metal-semiconductor contact resistance on the accuracy of the numerical simulation is also examined.<
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