Pressure-tuned GaAs diode-laser absorption spectrocopy of xenon hyperfine structure

The high-resolution and broad tuning-range capabilities of semiconductor lasers under hydrostatic pressure are demonstrated. GaAs diode lasers operating under pulsed chirped mode conditions at 77 K are used to obtain Doppler-limited absorption spectra of several
6s \rightarrow 6p
transitions in xenon atoms excited in a hollow-cathode discharge. The hyperfine structure so obtained is in agreement with previous spectral studies of xenon isotopes using conventional emission interferometric and RF beam techniques.