Optical and electrooptical analysis of GaAs inverted rib phase modulators grown by vapor phase epitaxy

We present experimental and theoretical analysis of GaAs homojunction Schottky barrier phase modulators. The waveguide structures-inverted rib-were grown using the vapor-phase-epitaxy chloride process. These structures are attractive because perfectly planar devices can be realized. Besides that, single-mode operation and low losses can be achieved. The optical (propagation losses, dispersion curves), electrical (electrical field distribution, breakdown voltages) and electrooptical (modulation efficiency) parameters have been calculated using numerical two-dimensional methods. In order to optimize the modulator, various waveguide structures as well as n+ (i.e., substrate) and n- (i.e., waveguide) dopings have been considered in the modeling. Experimental results fit well with the calculated ones. A modulation efficiency of 2.3° . V
^-1
. mm
^-1
has been measured. For a completely optimized structure, an efficiency of 4° . V
^-1
. mm
^-1
is expected.