AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth

A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD's fabricated by this process have shown sufficiently good characteristics (
Ith = 50-60
mA,
\eta_{D} = 40-45
percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).