Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response

A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time
\tau = 0.25-0.38
ps, cutoff frequency
f_{T} = 420-640
GHz, maximum oscillation frequency
f_{\max} = 530-610
GHz, and the common-emmitter current gain
\beta = 8- 34
are expected theoretically with the transverse area of 1000 × 1000 Å
²
and the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.