The electronic properties of GaAs/AlGaAs heterojunctions

An accurate calculation of the bound-state energies and wavefunctions for a (100) AIGaAs/GaAs/AlGaAs quantum well is undertaken. Complex bandstructures of the heterojunction are also calculated and shown to be a useful way of graphically illustrating all the solutions of the Schroedinger equation. The influence of the higher conduction bands is found to have a significant effect on the results. A comparison to the conventional one-band model is made. Deviations of 10-20 percent are found to occur.