Laser oscillation at 3-4 µm optically pumped InAs1-x-ySbxPy

Quaternary InAs
1-x-y
Sb
x
P
y
) and ternary InAs
1-x
Sb
x
have been grown on InAs substrates using liquid phase epitaxy. The quaternary layers are lattice matched to InAs for
y = 2.2x
, and have bandgaps greater than InAs. The ternary layers have lower bandgaps than InAs, but have larger lattice constants. Reasonable quality growth has been obtained up to
x = 0.15
where the luminescence peak is shifted to ∼4 from 3.1 μm and the lattice mismatch is ∼0.01. Optically pumped laser emission at 3.1 μm has been observed from 77 to 100 °K using an InAs active layer with InAs
1-x-y
Sb
x
P
y
clading layers. Laser emission at 3.9 μm has been observed from 77 to 125 °K using a InAs
1-x
Sb
x
active layer, with
x\sim 0.13
, and InAs cladding layers. Laser emission from intermediate ternary compositions has also been observed.