GaInAsP/InP surface emitting injection laser with a ring electrode

-A GaInAsP/InP surface emitting injection laser (
\lambda = 1.2 \mu
m) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.