A Ga0.47In0.53As/InP heterophotodiode with reduced dark current

We have used a Ga
0.47
In
0.53
As/InP heterostructure to produce a photodiode (area =
3 \times 10^{-4}
cm
²
) which shows a saturated dark current of 100 pA at 23°C and 1.7 nA at 50°C. At this dark current, these photodiodes have near-unity quantum efficiency at 1.6 μm and show good photoresponse over the
1.0-1.65 \mu
m region of the optical spectrum.