1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s

Comparably high performance has been obtained from both vapor-phase and liquid-phase epitaxy InGaAsP/InP 1.3 μm edge-emitting LED's. Best results include 135 μW of optical power coupled into a 50 μm core 0.2 NA graded-index fiber, spectral half-widths ∼600 Å, rise/fall times ∼2 ns, ac modulation rates ∼200 MHz, and reliable operation in excess of 17 000 h @70°C and 3000 h @120°C. Asymmetries in the far-field patterns of these devices are also discussed.