Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers

Deep Zn diffusion from a ZnP
2
source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the
1.2-1.3 \mu
m range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths (
<10 \mu
m), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.