An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications

An improved equivalent circuit model of a gallium-arsenide (GaAs) MESFET that is optimized for the design and analysis of precision analog integrated circuits is described. These circuits entail different modeling requirements from digital or microwave circuits, for which existing equivalent circuit models are optimized. Improved techniques are presented to model the drain-to-source conductance, device capacitance, and the functional dependence of drain-to-source current.