A comparison of high-speed I/sup 2/L structures

A comparison is made between the Schottky coupled I/SUP 2/L structure, low downward beta I/SUP 2/L, and conventional double base fully implanted I/SUP 2/L. All of these were fabricated together on a single chip so that a direct comparison could be made. The results of both measured and predicted ring oscillators are presented. Finally, the results of a D-type flip flop connected as a divide-by-two show that the SCTL gate is superior.