Microwave characterization of GaAs MESFET and the verification of device model

The elements in the small-signal equivalent circuit model of a microwave GaAs MESFET have been related to the device parameters (i.e., device structure, semiconductor properties, and operating point) by device theories. This equivalent circuit is experimentally verified by small-signal 3-GHz microwave measurements at room and liquid-nitrogen temperatures. The method used for determining the values of equivalent circuit parameters is briefly described.