Hot-carrier-induced degradation on 0.1 /spl mu/m SOI CMOSFET

For BC-SOI nMOSFET, higher valence-band electron tunneling leading to maximum hot-carrier-induced I/sub Dsat/ degradation on V/sub G/=V/sub D/. But for FB-SOI nMOSFET, initial I/sub Dsat/ degradation is enhanced by PBT when V/sub G//spl sim/V/sub T/. The maximum I/sub Dsat/ degradation occurs at V/sub G/=V/sub D/ due to electron tunneling. FB-SOI devices were inversely temperature-dependent compared to BC-SOI devices. For pMOSFET, the impact ionization was not obvious due to lower channel hole mobility, thus the maximum I/sub Dsat/ degradation occurred for V/sub G/=V/sub D/ for both SOI pMOSFETs.