A comparative approach of low frequency noise in 0.25 and 0.12 /spl mu/m Partially and Fully Depleted SOI N-MOSFETs

Low frequency noise (LFN) in N-channel Partially Depleted (PD) and Fully Depleted (FD) SOI devices fabricated on Unibond substrates is investigated for 0.25 and 0.12 /spl mu/m SOI CMOS technology nodes. LFN is analyzed in both linear and saturation regimes. We draw some comparisons between noise levels and kink-related excess noise for both technologies.