Effect of back-gate biasing on the performance and leakage control in deeply scaled SOI MOSFETs

In this paper, we examine the operation of SOI MOSFET devices with gate length down 10 nm. The results show that using the back gate as a threshold voltage control terminal offers significant advantage in terms of total power without sacrificing the performance significantly and with less constraint on fabrication. This scheme can also be used to adjust the threshold voltage caused by manufacturing variations.