Impact of gate tunneling on the nature of the charge dump current in 100nm PDSOI technology

We have shown that not only recombination lifetime, but also gate tunneling is an important component in determining the steady-state body potential in scaled PDSOI MOSFETs. Both elements affect the lateral bipolar induced charge dump current during pass gate transient operation. Increase in the gate tunneling current and reduction of the recombination lifetime have resulted in the displacement current from the drain and gate capacitances to be the dominant component of the charge dump current.