GaN power switching device growth by plasma assisted molecular beam epitaxy

Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.